![]() This successful SAB of Al 2O 3 thin films, which is a promising insulator material, opens the possibility of future room-temperature heterogenous integration and wafer-level packaging. In addition, the applicability of different Al 2O 3 microstructures in the SAB method was investigated, and the effectiveness of applying ALD Al 2O 3 was experimentally verified. ![]() These results indicate that strong bonds can be formed, which may be sufficient for device applications. The perfect dicing of the bonded wafer into dimensions of 0.5 mm × 0.5 mm was successful, and the surface energy, which is indicative of the bond strength, was estimated to be approximately 1.5 J/m 2. Transmission electron microscopy (TEM) observations indicated that these room-temperature-bonded Al 2O 3 thin films appeared to work well as nanoadhesives that formed strong bond between thermally oxidized Si films. In this study, room-temperature wafer bonding of Al 2O 3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) method.
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